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[Analysis Case] Trench-type Si-MOSFET IDSS Leakage Location Analysis

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img_C0707_1.jpg

[Analysis Case] Trench-type Si-MOSFET IDSS Leakage Location Analysis

img_C0707_2.jpg
img_C0707_2.jpg img_C0707_1.jpg

One-stop service from identifying device defects to analyzing causes.

Power devices are attracting attention from the perspective of power and energy conservation as switches for high voltage and large current. In power devices, wiring defects and electrical failures occur due to the application of high voltage. Additionally, identifying and analyzing the causes of defects is essential for improving product reliability. This document presents a case study where the identification of defective areas was conducted using EMS (Emission Microscopy Method), and the analysis of defect causes was evaluated using SCM (Scanning Capacitance Microscopy) and SEM (Scanning Electron Microscopy). Measurement methods: EMS, SCM, SEM Product field: Power devices Analysis purpose: Failure analysis and defect analysis For more details, please download the document or contact us.

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This is an analysis of power devices.

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[Analysis Case] Composite Analysis of IDSS Leakage Points in Trench-type Si-MOSFET_C0707

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