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[Analysis Case] Failure Analysis of SiC Transistor using Slice & View

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[Analysis Case] Failure Analysis of SiC Transistor using Slice & View

img_C0710_1.jpg
img_C0710_1.jpg img_C0710_2.jpg

Check the leak path by 3D visualization of SEM images.

For the SiC transistor, where the leak location was identified using a backside emission microscope, cross-sectional SEM observation was conducted using Slice & View. With Slice & View, it is possible to capture images of the leak location without missing it by performing cross-sectional observations at a pitch of several tens of nanometers around the leak area. By converting the SEM images into 3D, the leak path can be confirmed. Measurement method: Slice & View, EMS Product area: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

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Analysis of power devices.

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[Analysis Case] Failure Analysis of SiC Power Transistor Leakage Locations Using Slice & View (3D-SEM) _C0710

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