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[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

img_C0711_1.jpg
img_C0711_2.jpg

[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

img_C0711_1.jpg
img_C0711_1.jpg img_C0711_2.jpg

It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.

We conducted Slice & View on a SiC transistor where the leak location was identified using a backside emission microscope, and performed magnified observation and SEM-EDX analysis at the confirmed destruction site. Bright contrast was observed in the reflected electron images, indicating the segregation of Si and Ni. It is believed that some segregation of elements such as Si and Ni occurred due to the destruction caused by the leak. Measurement methods: Slice & View, SEM-EDX, EMS Product field: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

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[Analysis Case] Component Analysis of Leak Location in SiC Power Transistor_C0711

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