一般財団法人材料科学技術振興財団　MST Official site

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ESD test

A0060.jpg
A0060.jpg

ESD test

We evaluate the effects and destruction tolerance when semiconductors and electronic components are subjected to stress from static electricity.

- MM (Machine Model) test: A test that simulates damage caused by the discharge of static electricity accumulated in metals and other materials. - HBM (Human Body Model) test: A test that simulates damage caused by the discharge of static electricity accumulated in the human body. - CDM (Charged Device Model) test: A test that simulates damage caused by the discharge of static electricity occurring when a charged conductor comes into contact with terminals of different potentials. - Latch-up test*: Evaluates the resistance to the phenomenon of latch-up, where excessive current continues to flow in devices with a parasitic thyristor structure. *Corresponds to pulse current injection method and power supply overvoltage method.

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Semiconductor devices, electronic components Analysis methods basic edition A00602020/10/012020/10/01 Overview

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