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SSDP-SIM

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SSDP-SIM

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SSDP： Substrate Side Depth Profile

In secondary ion mass spectrometry (SIMS), due to phenomena such as surface roughness, the knock-on effect where atoms present on the surface are pushed inward by ion irradiation, and crater bottom roughness, it may not be possible to obtain sharp elemental distributions. To address this issue, the SSDP method (Back-Side SIMS) involves performing SIMS analysis from the substrate side (the back side) after thinning the sample. This technique allows for a more accurate evaluation of elemental distribution without being affected by the sample shape or measurement conditions.

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- Barrier properties of barrier metal - Infiltration of metal into low-k films - Evaluation beneath uneven silicide surfaces

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SSDP-SIMS_B0013

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MST is a foundation that provides contract analysis services. We possess various analytical instruments such as TEM, SIMS, and XRD to meet your analysis needs. Our knowledgeable sales representatives will propose appropriate analysis plans. We are also available for consultations at your company, of course. We have obtained ISO 9001 and ISO 27001 certifications. Please feel free to consult us for product development, identifying causes of defects, and patent investigations! MST will guide you to solutions for your "troubles"!

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