[Analysis Case] Evaluation of Element Distribution in Oxide ReRAM Operating Area Using SIMS
High-sensitivity evaluation of local elemental distribution in oxide devices using oxygen isotopes.
In oxide ReRAM, it was suggested that oxygen diffusion associated with the application of an electric field is related to memory operation (resistance change). Since SIMS analysis allows for the measurement of isotopes, utilizing the isotope 18O ion implantation technique enables the tracking of oxygen diffusion. For devices where 18O was locally implanted, a bridge structure that serves as the operating region was formed by applying an electric field, and elemental mapping revealed that the intensity of 18O in the bridge area was weak, indicating localized reduction.
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Applications/Examples of results
Analysis of oxide semiconductors, LSI, and memory.