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[Analysis Case] Depth Profile Analysis of Impurities in Organic EL Devices Using SIMS

C0030.jpg
C0030.jpg

[Analysis Case] Depth Profile Analysis of Impurities in Organic EL Devices Using SIMS

Evaluate organic EL elements with good depth direction resolution.

To extend the lifespan of organic EL devices, it is essential to evaluate the degradation caused by electromigration, making it important to investigate the diffusion state of electrode metal components into the organic layer. However, whether analyzed directly from the cathode side or through the SSDP method from the anode side, the depth resolution decreases, making it difficult to assess the diffusion from the interface into the organic layer. (Note: SSDP method refers to analysis from the backside. For details on the analytical method, see section B0013.) Therefore, by using special processing to expose the cathode/organic layer interface and the organic layer/anode interface, it has become possible to evaluate the organic layer with high depth resolution.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/37…

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[Analysis Case] Depth Profile Analysis of Impurities in Organic EL Devices Using SIMS_C0030

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