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[Analysis Case] Evaluation of the BSF Layer in Si-based Solar Cells

C0136.jpg

[Analysis Case] Evaluation of the BSF Layer in Si-based Solar Cells

C0136.jpg
C0136.jpg

Impurity evaluation with in-plane distribution is possible using cross-sectional imaging SIMS.

This paper introduces a method for evaluating the in-plane distribution of solar cells with surface roughness while avoiding the effects of the roughness, using cross-sectional samples assessed by imaging SIMS. It was found that in regions identified as p+ Si layers by cross-sectional SCM, B and Al were present in high concentrations. Furthermore, using line profiles, the dopant distribution was converted to concentration, quantifying the degree of inhomogeneity in the plane. This method can also be applied to deep junction evaluations of power devices and impurity distribution assessments between and within trenches. Measurement methods: SIMS, SCM, SNDM Product field: Solar cells Analysis objectives: Trace concentration evaluation, composition distribution evaluation, shape evaluation For more details, please download the materials or contact us.

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Analysis of solar cells.

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[Analysis Case] Evaluation of the BSF Layer in Si Solar Cells_C0136

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