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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/28…

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Analysis of oxide semiconductors.

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