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[Analysis Case] Evaluation of Ion Implantation Damage in GaN by XAFS

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[Analysis Case] Evaluation of Ion Implantation Damage in GaN by XAFS

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It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.

Gallium nitride (GaN) is used as a material for LEDs and power devices due to its high thermal conductivity and high breakdown voltage characteristics. In its manufacturing process, the production of high-quality GaN crystals without crystal defects is required, making the assessment of damage from ion implantation and the degree of recovery an important evaluation criterion. This document presents a case study evaluating the damage caused by ion implantation into GaN substrates using XAFS. It is possible to detect disturbances in the crystal structure near the GaN surface, as well as N2 and interstitial N within the film, with high precision.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/40…

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Analysis of lighting and power devices.

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[Analysis Case] Evaluation of Ion Implantation Damage in GaN by XAFS_C0472

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