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Hard X-ray Photoelectron Spectroscopy

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Hard X-ray Photoelectron Spectroscopy

HAXPES is an analytical method that uses hard X-rays as the excitation light for XPS (X-ray photoelectron spectroscopy).

It is also referred to as HX-PES or HXPES. Due to high-energy X-ray excitation, it allows for bulk state evaluation up to approximately 50 nm deep, which is several to about 10 times deeper than conventional XPS, as well as damage-free evaluation of bonding states at interfaces. This device is a laboratory instrument equipped with a GaKα source (9.25 keV), which enables a reduction in the time lag from sample preparation to measurement. - Bulk-sensitive state evaluation (approximately up to 50 nm) - Non-destructive evaluation of buried interface bonding states - Evaluation using deep inner shell orbitals (avoiding overlapping Auger peaks in XPS, analysis using the non-split 1s orbital) It also includes options for measurements combined with sputtering using GCIB (Gas Cluster Ion Beam), angle-resolved measurements, Al source (1.49 keV), neutralization guns, and measurements under non-exposure to the atmosphere. - Damage-free sputter cleaning using GCIB (depth profiling is generally not possible) - Depth-direction comparison of bonding states using Al source and angle-resolved measurements - Evaluation under non-exposure to the atmosphere

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Applications/Examples of results

- Evaluation of bulk state of Si-based anode materials and cathode metal oxides in lithium-ion batteries - Evaluation of interfacial state of gate insulating films and capacitor materials - Depth-wise state changes on metal corrosion surfaces - Evaluation of bonding states of core-shell type nanoparticles - Evaluation of bulk state of organic materials

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