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[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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basic information

When an ion beam is irradiated onto a solid sample, secondary electrons are generated. These secondary electrons produce contrast according to the crystal orientation of each grain. This image is referred to as a Scanning Ion Microscope (SIM) image. Although similar contrast images can also be obtained by electron beam irradiation, the contrast is more pronounced with ion beams. By observing the SIM images of polycrystalline metals, it is possible to gain insights into the size and distribution of the crystal grains.

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Applications/Examples of results

- Visualization of current paths through cross-sectional observation (conductive contrast) - Observation of crystal grains such as Al, Cu, and Fe (channeling images) - Crystal grain size analysis using multi-angle inclination

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