[SSRM] Scanning Spreading Resistance Microscopy

Local resistance measurement at the nanometer level is possible.

SSRM is a method that visualizes the spreading resistance directly beneath the probe by scanning the surface of a sample with applied bias using a conductive probe and measuring the distribution of resistance values in two dimensions. When measuring silicon semiconductor devices, it is sensitive to carrier concentrations of 10^16 cm^-3 or higher, depending on spatial resolution. - Local resistance measurement at the nanometer level is possible - Effective for measuring the dopant concentration distribution in semiconductors - Cannot determine the polarity of semiconductors (p-type/n-type) - Quantitative evaluation is not possible

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■What is spreading resistance? Spreading resistance refers to the measurement of resistance values by applying a bias voltage to a sample, allowing carriers located directly beneath the probe to flow into the probe, and amplifying that current with a logarithmic amplifier. At this time, the applied bias voltage rapidly attenuates directly beneath the probe. Therefore, the carriers that can flow into the probe are limited to those that are very close to the probe, and this is detected as a resistance value. This type of local resistance is called spreading resistance. ■Diamond-coated probe In SSRM, probes made of silicon with a diamond coating are mainly used. The tip of these probes is sharpened to a few tens of nanometers, and particularly the pointed part has a sharpness of a few nanometers. SSRM enables high-resolution measurements to detect carriers located directly beneath this fine probe.

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Applications/Examples of results

- Local resistance measurement Evaluation of the diffusion layer shape of silicon semiconductor devices (MOSFET) Evaluation of the diffusion layer shape of compound semiconductor devices (LEDs, laser devices, power MOSFETs) Evaluation of resistance distribution in compound solar cells and lithium-ion secondary batteries Measurement of leakage spots in insulating films