[Hot Stage] Ultra High Temperature Substrate Heating Stage Max 1800℃
An ultra-high temperature substrate heating stage that allows for substrate elevation, rotation, and RF/DC substrate bias all in one device! 'All-In-One' component.
Semiconductors, electronic substrates, vacuum thin film process equipment and research and development【Ultra-high temperature substrate heating mechanism】 Compatible substrate sizes: Φ2 to 6 inches Can be used in vacuum (UHV compatible), inert gas, O2, and various process reactive gas atmospheres, etc. (Details to be discussed separately)
basic information
◉ Compatible with ultra-high vacuum, inert gas atmosphere, and various other process gas atmospheres ◉ Stage vertical movement (substrate or heater elevation, two-stage elevation for substrate & heater) ◉ Substrate rotation ◉ RF (1KW)/DC (800V) bias application (reverse sputtering) ◉ Selection of elements according to the operating environment: Graphite, CC composite, halogen lamp heater, graphite/SiC coating, graphite/PBN coating, PG coating, AlN heater ◉ Various vacuum flange connections: ICF, ISO (KF/LF), JIS (VG/VF) flanges ◉ K, C, R thermocouples included ◉ Other options: temperature control unit, Inc, graphite or SiC substrate holder
Price information
For details, please contact our company. Prices may vary depending on specifications, so feel free to contact us.
Delivery Time
Applications/Examples of results
【Applications】 CVD/PVD (vacuum deposition/sputtering equipment), various high-temperature annealing applications, etc. 【Examples】 - TCVD, PECVD, sputtering and other film deposition equipment - High-temperature upgrades of existing thin film equipment heating stages, installation of additional mechanisms for up/down, rotation, and bias - Installation on new process evaluation machines and prototype machines
Detailed information
-
4-inch hot stage max 1200°C with RF bias example
-
4-inch hot stage with water cooling Installation example of 4-inch hot stage with water-cooled housing Max 1200℃ graphite element Inconel wafer holder
-
Atmospheric Side Z-axis Drive Motor Atmospheric Side Z-axis Drive Motor (50mm Stroke Example) RF Bias
-
2inch hot stage NiCr element max1000C with bias 2inch hot stage NiCr element max1000C with bias Inconel wafer holder
catalog（37）
Download All Catalogs
News about this product（59）
-
☆★☆ 【TCF-C500 Ultra High Temperature Small Experimental Furnace】Max 2900℃ ☆★☆
Compact, space-saving, and energy-efficient! High-performance ultra-high-temperature experimental furnace for R&D. A compact experimental furnace capable of heating small samples up to 2900°C for R&D purposes. It can be used for various sintering experiments, including ultra-high-temperature heating experiments and new material development in the laboratory. ◆ Main Features ◆ - Space-saving - Includes rotary pump and compressor - Interlock: water cut-off alarm, overheating, gas pressure drop ◆ Basic Specifications ◆ - Power supply specifications: AC200V 75A NFB 50/60HZ (C-500) - Max 2900°C (carbon furnace), 2400°C (metal furnace) - Programmable temperature controller, C thermocouple ◆ Options ◆ - Recorder - Turbo molecular pump - Crucible ◆ Main Applications ◆ - New material development - Fuel cells - Others
-
◆nanoPVD-T15A◆ High-performance organic and metal film deposition device
Ideal for organic thin film deposition applications such as OLED, OPV, and OTFT. Utilizes low-temperature organic deposition sources with excellent temperature responsiveness/stability and high-temperature deposition sources for metal films. A fully automated R&D vacuum deposition system with easy touch panel operation, excellent operability, and maintainability. An intuitive HMI that allows anyone to operate without complicated procedures. Connects to a PC via USB cable for log saving and creating and storing automatic deposition recipes. ◉ Compact size: 804(W) x 530(D) x 600(H)mm ◉ Weight: 40kg to 70kg (depending on equipment configuration) ◉ Excellent basic performance - Achievable vacuum level: 5x10-5 Pascal - Equipped with a high-performance turbo molecular pump - Φ2 inch or Φ4 inch substrates ◉ Deposition sources - Resistance heating deposition source TE x up to 2 units - Organic deposition source LTE x up to 4 units (if mixed with resistance heating TE, up to 2 units) ◉ 7" touch panel ◉ Continuous deposition - Automatic control of deposition programs - 30 types of registered recipes - High-precision wide-range vacuum gauge ◉ Abundant options - Substrate rotation - Up and down lift with 300mm stroke - Substrate shutter - Dry pump (RP standard)
-
The catalog for the MiniLab Flexible Thin Film Experimental Device has been renewed!
We have completely renewed the catalog for the MiniLab series thin film experimental equipment. 【Features of the MiniLab Series】 ◉ Supports sputtering, evaporation (resistive heating, organic, EB), annealing, plasma etching, etc. ◉ Modular design allows for flexible combinations of components (source hybrid types and multi-chamber configurations are possible) ◉ Compact, space-saving design (width 1,200 x depth 560 mm) ◉ Excellent operability: intuitive interface allows for centralized management of all operations via a touch panel without dispersion. We are confident that this will be of great assistance in research and development settings. Please consider it.
-
□■□■【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃ □■□■
Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sample sintering inside the crucible (for solid, powder, granular, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others
-
Wafer Annealing Furnace [MiniLab-WCF] Max 2000℃_Specialized for Ultra-High Temperature Wafer Annealing (4 inch to 8 inch)
High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System ◾️ Max 2000℃ ◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette) ◾️ Heater Control: 1 zone or 2 zones (cascade control) ◾️ Heater Material: ・C/C Composite: Φ6 to Φ8 inch ・PG Coating High Purity Graphite: Φ6 to Φ8 inch ◾️ Operating Atmosphere: ・Vacuum (1x10-2Pa), Inert Gas (Ar, N2) ◾️ PLC Semi-Automatic Operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation allows centralized management without dispersed control. ◾️ Process Pressure Control ・APC Control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve ◾️ PLOT screen graph display, CSV data output
Recommended products
Distributors
【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.