Equipped with various conditions necessary to create a highly uniform "high-quality" thin film required in research and development settings. The nano series is a high-performance device that condenses functionality into a compact body. It employs a robust and highly airtight stainless steel chamber that ensures a high vacuum environment and sufficient T/S adjustment distance, which are essential elements for high-quality film formation with minimal defects. Additionally, all models share the IntelliDep software, which allows anyone to operate the system regardless of their level of expertise, thanks to its intuitive and easy-to-understand touch panel interface. 【nano Benchtop Compact Thin Film Experimental Equipment】 ◉ nanoPVD-S10A: RF/DC Magnetron Sputtering Device ◉ nanoPVD-T15A: Organic Film and Metal Film Deposition Device ◉ nanoPVD-ST15A: Mixed Deposition and Sputtering Composite Thin Film Experimental Device ◉ ANNEAL: Wafer Annealing Device ◉ nanoCVD: Graphene/CNT Synthesis Device ◉ nanoEM: High Vacuum EM Coater * For other detailed specifications, please contact us.

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple

<30W Low Power Control for Damage-Free Etching Achieves delicate etching processes with an output control precision of 10mW. A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010. 【Features】 • 2D (Transition Metal Chalcogenides, graphene delamination after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*Option for "Fluorine Gas Supply Module," requires SF6 gas system) • SiO2 etching (*Option for "Fluorine Gas Supply Module," requires CHF3 gas system) 【Specifications】 ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with a 7" touch panel and PLC automatic sequencing ◉ Automatic pressure control (APC) ◉ One Ar gas line (standard) + up to three additional lines for N2 and O2 ◉ Connects to a Windows PC with a USB port for automatic etching recipe creation and storage. Data logging on PC.