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[OBIRCH] Light Beam Heating Resistance Variation Method

OBIRCH is a method that utilizes the change in resistance caused by the heat generated at defect locations when light is applied, to identify abnormal areas.

OBIRCH is a method that utilizes the change in resistance caused by the heat generated at defect locations when light is applied, allowing for the identification of abnormal areas. - It can identify the locations of voids and deposits within wiring and vias. - It can identify abnormal contact resistance. - It can identify short circuits in wiring. - It visualizes the DC current path. - It is capable of detecting micro-leaks in gate oxide films.

Related Link - https://www.mst.or.jp/method/tabid/162/Default.asp…

basic information

1. The laser scans the observation area. The wiring section irradiated by the laser experiences a temperature rise, causing a change in resistance. 2. The current value (or voltage value) is read in synchronization with the laser scan. 3. Defects such as voids and precipitates have different TCRs compared to the normal wiring section, resulting in different resistance change amounts, which are detected as unique current values (or voltage values).

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Applications/Examples of results

- Si devices (transistors, MOSFETs, IGBTs, CMOS sensors) - SiC power devices (Schottky barrier diodes, MOSFETs, etc.) - GaN light-emitting elements and GaN devices (LDs, LEDs, HEMTs, etc.) - MEMS (pressure sensors, accelerometers)

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