Lock-in thermal analysis method

Product Inquiry

The lock-in thermal analysis method detects slight temperature increases in the current path.

- The IR-OBIRCH function is also included, allowing for further narrowing down of the fault location after identifying the heat generation area through IR-OBIRCH measurement. - By detecting infrared, it is possible to non-destructively identify fault locations without the need for opening the package through etching or removing electrodes. - By using lock-in signals, it is possible to identify heat generation areas with high S/N, enabling cross-sectional analysis such as Slice & View.

basic information

It is a semiconductor failure analysis device that detects heat generated inside the device and identifies the failure location. By overlaying the heat generation images detected by a high-sensitivity infrared detector with high-resolution pattern images obtained from an IR confocal laser microscope, it quickly identifies the failure location with high sensitivity and high positional accuracy.

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Applications/Examples of results

■Symptoms - Wiring leakage or short circuit defects - Identification of electrostatic destruction points - Measurement of heat distribution on the light-emitting element - Microplasma leakage and insulation defects in the oxide film - Measurement of heat distribution on the light-emitting element ■Devices - Si devices (transistors, MOSFETs, IGBTs, CMOS sensors) - SiC power devices (Schottky barrier diodes, MOSFETs, etc.) - GaN light-emitting elements and GaN devices (LD, LED, HEMT, etc.) - MEMS (pressure sensors, accelerometers) - Identification of insulation degradation areas in ICs, substrates, etc.