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[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells

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PL強度マッピング像2.png
多結晶太陽電池セル片の実態顕微鏡写真.png
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[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells

C0209.jpg
C0209.jpg PL強度マッピング像2.png 多結晶太陽電池セル片の実態顕微鏡写真.png PLスペクトル.png

It is possible to non-destructively identify the location of defects in solar cell cells.

When light with energy greater than the bandgap of a solar cell is irradiated, carriers are generated, and some of them undergo radiative recombination. The light emitted during this process is called photoluminescence (PL). However, in areas where defects are present, carriers are trapped, resulting in reduced PL intensity. Therefore, by conducting PL mapping measurements, it is possible to non-destructively and easily identify defect locations. Below is an example of identifying defect locations through PL mapping measurements in multicrystalline silicon solar cell modules.

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Measurement Method: PL Product Field: Solar Cells Analysis Purpose: Structural Evaluation

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[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells_C0209

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