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[Analysis Case] Stress Evaluation by Raman Mapping

C0522_ラマンマッピングによる応力評価.jpg

[Analysis Case] Stress Evaluation by Raman Mapping

C0522_ラマンマッピングによる応力評価.jpg
C0522_ラマンマッピングによる応力評価.jpg

It is possible to confirm the stress distribution in the sample cross-section.

The peaks in the Raman spectrum of single crystal Si shift to higher wavenumbers when compressive stress is applied to the sample and shift to lower wavenumbers when tensile stress is applied. This allows us to gain insights into the stress in Si. An example is shown where the distribution of stress in the cross-section of an IGBT (Insulated Gate Bipolar Transistor) was confirmed using Raman mapping.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/46…

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Analysis of LSI, memory, power devices, and solar cells.

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[Analysis Case] Stress Evaluation by Raman Mapping_C0522

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