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Qualitative and quantitative evaluation of metallic impurities in non-alkali glass.

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Qualitative and quantitative evaluation of metallic impurities in non-alkali glass.

img_B0303_1.jpg
img_B0303_1.jpg

TOF-SIMS, D-SIMS: Secondary Ion Mass Spectrometry

In semiconductor manufacturing processes, the contamination of impurities can lead to a decrease in characteristics and manufacturing yield, making the prompt identification and quantification of impurity elements crucial. At MST, we qualitatively analyze impurity elements using TOF-SIMS (Static-SIMS) and quantitatively measure the detected elements in the depth direction using D-SIMS (Dynamic-SIMS), enabling the evaluation of impurities within devices. This document presents a case study of measuring metal impurities in alkali-free glass.

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It is an analytical method used for oxide semiconductors, LSI/memory, electronic components, and manufacturing equipment/parts.

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Qualitative and Quantitative Evaluation of Metal Impurities in Alkali-Free Glass_B0303

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