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Cross-sectional processing using the ion polish method.

B0051.jpg

Cross-sectional processing using the ion polish method.

B0051.jpg
B0051.jpg

A method for removing the surface of a sample by utilizing the sputtering phenomenon, where sample atoms are ejected from the sample surface.

The IP method utilizes the sputtering phenomenon, where sample atoms are ejected from the sample surface when an ion beam with aligned energy and direction is irradiated onto the sample. It is also referred to as the CP method (Cross-section Polish). The ion species used is typically a noble gas (Ar in MST) that does not pose concerns for chemical reactions with the sample. In the AES analysis of the processed surface, the components of the shielding plate (Ni, P) were below the detection limit. ■Features - Wide-area cross-section processing is possible (approximately 500μm to 1mm) - No impact from mechanical polishing damage - Minimal surface contamination - Non-exposure to the atmosphere, cooling processing is possible

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? Cross-sectional observation of laminated films with different hardness ? Cross-sectional observation of films where delamination occurs at the interface ? Observation of crystal grains (EBSD) ? FIB processing (for TEM observation) and AES analysis

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Cross-sectional processing using the ion polish method_B0051

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