SIMS (Secondary Ion Mass Spectrometry)

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This is a method for qualitative and quantitative analysis of components contained in a sample by detecting secondary ions and measuring the detection amount at each mass.

When ions are incident on the sample surface, various particles such as electrons, neutral particles, and ions are emitted from the sample surface. SIMS is a technique that detects these ions and measures the detection quantity at each mass to perform qualitative and quantitative analysis of the components contained in the sample. - High sensitivity (ppb to ppm) - Analysis of all elements from H to U is possible - Wide detection concentration range (from major component elements to trace impurities) - Quantitative analysis using standard samples is possible - Depth direction analysis is possible - Evaluation with depth direction resolution of a few to several tens of nm is possible - Measurement of micro-regions up to a few micrometers in size is possible - Isotope analysis is possible - Destructive analysis

basic information

When ions such as oxygen and cesium (primary ions) are irradiated onto the sample surface, the atoms near the sample surface are stirred, and some of them are ejected into the vacuum (sputtering). By mass analyzing the ejected particles, which are ions (secondary ions), qualitative and quantitative analysis of the components contained in the sample is performed.

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Applications/Examples of results

- Evaluation of constituent elements - Evaluation of contamination and impurities - Evaluation of elemental distribution in the depth direction - Evaluation of two-dimensional and three-dimensional elemental distribution - Evaluation of various metal materials, inorganic materials, carbon materials, and organic materials