(S)TEM (Scanning Transmission Electron Microscopy)

Elemental analysis, state evaluation, particle size analysis, and acquisition of three-dimensional structural images at the nanoscale.

TEM (Transmission Electron Microscopy) is a method that involves irradiating a thin sample with an electron beam, imaging the electrons that have passed through or scattered from the sample, and observing it at high magnification. ■ Advantages - Enlarged images can be obtained with sub-nanometer spatial resolution, allowing for the observation and analysis of the sample's fine structure and lattice defects. - It is possible to evaluate the crystallinity of the sample and identify materials. - By fabricating samples using FIB (Focused Ion Beam), it is possible to observe specific locations within a device with pinpoint accuracy. - By combining optional features, it is also possible to analyze the composition and state of localized areas. ■ Disadvantages - It is necessary to thin the sample (in some cases, thinning may be difficult for certain samples). - It does not observe individual atoms but rather displays average information in the thickness direction of the sample (typically about 0.1 μm thick). - Sample processing and observation may lead to alteration or deformation of the sample.

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When electrons pass through a thin sample, some electrons continue straight through the sample, while others are scattered due to the type of atoms and crystallinity. The scattered electrons can be broadly classified into elastic scattered electrons and inelastic scattered electrons, and by selecting and imaging these electrons according to the purpose, insights into the morphology, crystal structure, composition, and electronic states within the sample can be obtained.

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Applications/Examples of results

- Observation of various shapes and forms, three-dimensional shape evaluation of fine particles - Evaluation of various dimensions (laminated film thickness, dimensions such as gate length, etc.) - Observation of crystal defects (dislocations, stacking faults, grain boundaries, precipitates, etc.) - Evaluation of crystallinity (orientation, degree of crystallization, grain size, etc.) - Failure analysis of specific locations (investigation of the causes of defects) - Evaluation of foreign substances (morphological observation, qualitative analysis using EDX, etc.) - Evaluation of stress and strain and so on.