Scanning Electron Microscopy (SEM)

High magnification observation (up to about 300,000 times) is possible.

SEM is a technique that allows for obtaining contrast based on the information from electrons emitted from a sample when an electron beam is directed at it, revealing the sample's surface roughness and compositional differences. - High magnification observation (up to about 500,000 times) is possible with simple operation. - Observation of secondary electron (SE) images, backscattered electron (BSE) images, and transmitted electron (TE) images is possible. - Observation can be conducted within an acceleration voltage range of 0.1 to 30 kV. - Samples up to 6 inches can be loaded into the device (depending on the equipment). - By combining options with SEM, various types of information can be obtained: - Elemental analysis using an EDX detector is possible. - Measurement of electron beam induced current (EBIC) allows for evaluation of the junction position and shape in semiconductors. - Crystal information can be obtained using electron backscatter diffraction (EBSD) method. - Three-dimensional structural information can be acquired through repeated FIB processing and SEM observation (Slice & View). - Cooling observation and atmosphere-controlled observation are available.

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By directing electrons at the sample, images of secondary electrons, backscattered electrons, and transmitted electrons (which require thinning of the sample) emitted from the sample surface can be obtained. The spread of the incident electrons varies depending on the acceleration voltage and the material, and accordingly, the depth from which the electrons are emitted (the depth at which the electrons come out) also changes. Therefore, it is necessary to select the optimal acceleration voltage based on the purpose.

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Applications/Examples of results

- Surface observation of the sample - Cross-sectional observation of the sample - Failure analysis - Film thickness measurement - Particle size measurement