[EMS] Emission Microscopy Method

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Rapid identification of the malfunctioning area.

EMS is a method that quickly identifies the location of faults by detecting weak light emissions caused by abnormal operation of semiconductor devices. It is also referred to as EMMS, PEM, or EMI. - Only transparent materials can be evaluated in the measurement wavelength range (from the visible to near-infrared region). - It is possible to capture internal defects such as cracks, crystal defects, oxide film breakdown due to ESD, and shorts caused by Al spikes with low damage.

basic information

As light sources, there are those due to electric field accelerated carrier scattering relaxation emission in the space charge region, such as carrier electric field acceleration, current concentration, and F-N tunneling current; those due to band-to-band carrier recombination emission, such as forward bias in pn junctions and latch-up; and those due to thermal radiation caused by short circuits between wires and increased resistance due to wire thinning.

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Applications/Examples of results

■Identification of abnormal areas (leakage points) - Si power devices (transistors, MOSFETs, IGBTs, thyristors, etc.) - SiC power devices (Schottky barrier diodes, MOSFETs, etc.) - GaN light-emitting elements and GaN devices (LD, LED, HEMT, etc.) - Organic EL elements - MEMS (pressure sensors, accelerometers, etc.)