Multivariate Multi-Sputtering Device [MiniLab-S125A]
High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)
Continuous multilayer film, simultaneous film formation (2-6 elements simultaneous film formation: RF, DC can be freely switched from HMI) High-power RF, DC power supplies, and pulse DC power supplies can be flexibly configured for multi-cathode using our unique 'Plasma Switching Relay' module, allowing for various applications. High-temperature substrate heating stage (double jacket water-cooled) options: -1) Max 600℃ (lamp heating) -2) Max 1000℃ (C/C composite) -3) Max 1000℃ (SIC coating) Reverse sputtering stage inside the load lock: -1) 300W, or -2) Soft-Etching (<30W) System main control: 'IntelliDep' control system Windows PC (or TP HMI) interface All operations are centrally managed from a single HMI screen.
basic information
【Main Specifications】 - Board Size: Supports up to 12 inches - Chamber: SUS304 UHV compatible, 500 x 500 x 500 mm - Achievable Vacuum Level: 5 x 10^-5 pascal - Sputter Cathodes: Φ2" (maximum 6), Φ3" (maximum 4) - Plasma Power Supply: RF 150W, 300W, DC 850W, HiPIMS 5KW - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Turbo Molecular Pump + Dry Scroll Pump - Main Chamber RIE Etching Stage RF 300W - LL Chamber <30W Low Power Control *Soft Etching *Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Control via Touch Panel or Windows PC: All operations can be performed through the touch panel/PC without dispersing control. - Equipment Installation Dimensions: 1,767(W) x 754(D) x 1,645(H) mm ● Mixed specifications such as resistive heating deposition, organic material deposition, and EB deposition are also possible. ● Multi-chamber systems can also be manufactured.
Price information
Please contact us.
Delivery Time
Applications/Examples of results
Manufacturing factories for electronic devices, fuel cells, displays, universities and research institutions, pharmaceutical and chemical factories, food factories, and many others.
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★【Magnetron Sputtering Cathode】★ Thermosera Japan
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☆★☆★【nanoCVD-8G】Graphene Synthesis Device ☆★☆★
◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple
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![Multisource Simultaneous Sputtering Device [MiniLab-S125]](https://image.mono.ipros.com/public/news/image/1/053/100513/IPROS09263764224142550225.jpeg?w=280&h=280)
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
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