[Analysis Case] SSDP-SIMS Analysis on SiC Substrates
It is possible to obtain the dopant concentration profile from the SiC substrate side.
In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.
basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of power devices.
