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[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices

c0286.jpg

[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices

c0286.jpg
c0286.jpg

Evaluation of activation rate is possible through composite analysis.

By comparing the impurity concentration distribution obtained from SIMS with the carrier concentration distribution from SRA, not only can we understand the activation state of the dopants, but the presence of unknown impurities and inherent structural issues are also suggested in areas that do not align. Using Profile Viewer, it is possible to overlay and analyze SIMS data and SRA data on your own. As an example, we will introduce a case where SIMS and SRA were performed on a commercially available diode chip, specifically on the central part of the surface and the outer edge (Figure 1) as well as the backside after the package was opened.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/10…

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Analysis of power devices.

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[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices_C0286

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