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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

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c0293.jpg

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/24…

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Analysis of lighting, power devices, and optical devices.

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure_C0293

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