[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure
It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.
In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.
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Applications/Examples of results
Analysis of lighting, power devices, and optical devices.