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[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD

c0384.jpg

[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD

c0384.jpg
c0384.jpg

Cross-sectional mapping allows for the evaluation of the crystal growth of GaN.

Gallium nitride (GaN) is used as a material for LEDs and power devices due to its high thermal conductivity and high breakdown voltage characteristics. In the manufacturing process of these products, it is essential to produce high-quality GaN crystals without crystal defects that can affect device characteristics. This document presents a case study evaluating the crystal state of samples in which c-GaN crystals were grown at high speed on c-plane GaN substrates (c-GaN substrates).

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/36…

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Analysis of power devices.

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[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD_C0384

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