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[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

c0401.jpg

[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

c0401.jpg
c0401.jpg

You can evaluate the p/n polarity and carrier concentration distribution of the SiC device's diffusion layer.

A cross-section of the SiC Planer Power MOSFET was fabricated, and the p/n polarity distribution of the diffusion layer was evaluated using SCM (Scanning Capacitance Microscopy), while the carrier concentration distribution was qualitatively assessed using SMM (Scanning Microwave Microscopy). From both sets of data, it was found that a p-type Body layer is formed in a two-layer structure around the n+ type Source layer, and that a Channel Epitaxial layer exists directly beneath the gate. At the edge of the Channel Epitaxial layer, a partial decrease in concentration was observed in the Source layer.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/19…

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Analysis of power devices.

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[Analysis Case] Evaluation of the Diffusion Layer of SiCPowerMOSFET by SCM and SMM_C0401

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