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[Analysis Case] Polarity Evaluation of GaN by ABF-STEM Observation

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[Analysis Case] Polarity Evaluation of GaN by ABF-STEM Observation

Atomic-level observation is possible with the Cs collector-equipped STEM.

GaN, which is being utilized as a power device and optical device, has a hexagonal wurtzite structure and exhibits crystallographic asymmetry (Ga polarity and N polarity) in the c-axis direction. The growth processes of epitaxial films differ between Ga polarity and N polarity, and the surface physical properties and chemical reactivity of the crystal also vary. In this document, the polarity of GaN was evaluated through annular bright field (ABF)-STEM observation. As a result, the positions of the Ga sites and N sites were identified, allowing for a visual clarification of the characteristics of Ga polarity and N polarity. Measurement method: TEM Product fields: Power devices, optical devices Analysis objectives: Shape evaluation, structural evaluation, thickness evaluation For more details, please download the document or contact us.

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Analysis of power devices and optical devices.

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[Analysis Case] Polarity Evaluation of GaN by ABF-STEM Observation_C0409

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