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[Analysis Case] Evaluation of High Electron Mobility Transistors

c0410.jpg

[Analysis Case] Evaluation of High Electron Mobility Transistors

c0410.jpg
c0410.jpg

Evaluation of crystal coherence and compositional distribution is possible with Cs collector attached STEM.

GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), achieve a two-dimensional electron gas layer through an AlGaN/GaN heterostructure, resulting in high electron mobility. This document presents a case study of the disassembly and evaluation of commercially available GaN HEMT devices. Using HAADF-STEM, we confirmed the crystallographic integrity near the AlGaN/GaN interface. Additionally, we assessed the compositional distribution using EELS. Measurement methods: TEM, EELS. Product field: Power devices. Analysis purpose: Structural evaluation, film thickness evaluation. For more details, please download the document or contact us.

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[Analysis Case] Evaluation of High Electron Mobility Transistors_C0410

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