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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC Using SIMS

c0421.jpg

[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC Using SIMS

c0421.jpg
c0421.jpg

Evaluates bulk concentrations at the ppb to ppt level.

In the development of ultra-high voltage, low-loss SiC power devices that can be used in substations, controlling low carrier concentration is necessary, and SIMS analysis is effective for evaluating extremely low concentrations of impurities. In SIMS analysis, it is possible to evaluate extremely low concentrations by limiting the impurities to one element without simultaneously acquiring multiple elements. This document presents analysis examples that evaluate the extremely low concentration range of impurities in SiC with ultra-high sensitivity, which has been difficult to assess conventionally.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/4/…

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Analysis of power devices.

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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC by SIMS_C0421

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