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[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films Using SIMS

c0416.jpg

[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films Using SIMS

c0416.jpg
c0416.jpg

It is possible to quantitatively evaluate impurity elements.

Gallium oxide (Ga2O3) has a higher band gap and superior physical properties compared to SiC and GaN, making it a material of interest for power devices that can be expected to be high-efficiency and low-cost. Controlling the impurity concentration, which affects the characteristics, is crucial in wafer development. This document presents a case study of impurity concentration analysis in Ga2O3 films. It is found that B and C are below the background level, while Si is present. MST offers a range of Ga2O3 standard samples and can quantify over 30 types of impurities.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/7/…

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Analysis of power devices.

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[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films by SIMS_C0416

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