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[Analysis Case] Evaluation of Metal Element Concentration Near the Surface of Gallium Oxide Ga2O3 Film

High sensitivity analysis even in extremely shallow areas.

Gallium oxide (Ga2O3) has a wider bandgap than SiC and GaN, and possesses excellent physical properties, making it a material of interest for high-efficiency, low-cost power devices. Controlling the impurity concentration, which affects the characteristics, is crucial in wafer development. This document presents a case study of quantitative analysis of metal elements in the vicinity of Ga2O3 films. TOF-SIMS allows for highly sensitive evaluation even in very shallow regions.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/34…

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Analysis of oxide semiconductors and power devices.

[Analysis Case] Evaluation of Metal Element Concentration Near the Surface of Gallium Oxide Ga2O3 Film_C0440

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