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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

c0494.jpg
c0494.jpg

High-resolution TEM observation of crystal defects detected by PL mapping.

In PL (photoluminescence) mapping, it is possible to identify the positions of crystal defects from the luminescent areas. Furthermore, by performing high-resolution STEM observation (HAADF-STEM images) at the same locations, we can capture stacking defects. In this case study, we investigated commercially available SiC power devices using PL mapping and STEM. After identifying the positions of stacking defects through PL mapping, we conducted μ-sampling at the defect edge and performed cross-sectional STEM observation.

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/42…

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Analysis of power devices.

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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices using PL and TEM_C0494

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