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[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls

Quantitative evaluation of the roughness of trench sidewalls related to device characteristics.

In recent years, SiC has been attracting attention as a material for high-voltage devices. The trench MOSFET structure is necessary for the high integration of devices, and the application development for SiC devices is progressing. Since the channel region of the trench MOSFET structure is the trench sidewall, the flatness of the trench sidewall is related to the reliability of the device. This document introduces an example of quantitatively evaluating the roughness of the trench sidewall of SiC trench MOSFETs using AFM (Atomic Force Microscopy).

Related Link - https://www.mst.or.jp/casestudy/tabid/1318/pdid/48…

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Analysis of power devices.

[Analysis Case] Evaluation of the Roughness of the Trench Sidewall of SiC Trench MOSFET_C0555

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