[Analysis Case] SiC by SMM and SNDM
You can evaluate the p/n polarity and carrier concentration distribution of the diffusion layer in SiC devices.
In recent years, SiC has attracted attention as a material for high-voltage devices. The trench MOSFET structure allows for high integration of the elements, and applications for SiC devices are also being advanced. On the other hand, there are challenges regarding the dopant activation rate of SiC devices, making performance evaluation important. In this instance, we will introduce a case where carrier polarity determination was conducted using SNDM (Scanning Nonlinear Dielectric Microscopy) and carrier concentration distribution was evaluated using SMM (Scanning Microwave Microscopy) for SiC trench MOSFETs.
basic information
For detailed data, please refer to the catalog.
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Applications/Examples of results
Analysis of power devices.