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[Analysis Case] Evaluation of Ion Implantation Damage Layer in Gallium Oxide Ga2O3

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img_C0718_1.jpg

[Analysis Case] Evaluation of Ion Implantation Damage Layer in Gallium Oxide Ga2O3

img_C0718_2.jpg
img_C0718_2.jpg img_C0718_1.jpg

Confirming the differences due to variations in annealing conditions after ion implantation.

Gallium oxide (Ga2O3) has a wider bandgap than SiC and GaN, and possesses excellent physical properties, making it a focus of attention as a material for power devices that can be expected to be high-efficiency and low-cost. Controlling impurity concentration and crystallinity, which influence the characteristics of the devices, is crucial for their development. This document presents the results of observations of the damage layer and changes in surface roughness caused by disturbances in the crystal structure due to ion implantation, under various annealing conditions. Measurement methods: TEM, AFM Product fields: Oxide semiconductors, power devices Analysis objectives: Shape evaluation, structural evaluation For more details, please download the document or contact us.

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Analysis of oxide semiconductors and power devices.

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[Analysis Case] Evaluation of Ion Implantation Damage Layer in Gallium Oxide Ga2O3_C0718

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