Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple

The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also accommodate a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), electron beam deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition source x up to 4 units - Organic deposition source x up to 4 units - Magnetron sputtering cathode x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.

4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)