High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC, capable of depositing metals, insulators, and other materials without impurities. It also excels in maintainability. 【Features】 - Compatible with high vacuum - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, eliminating the need for bonding - Excellent maintainability, allowing for easy target replacement - A wide range of options including shutters, chimney ports, gas injection, and high-strength magnets for magnetic materials - Compatible with various flange sizes 【Main Specifications】 ■ Compatible with RF, DC, and pulse DC ■ Target thickness: 1/16" to 1/4" ■ N-type coaxial connector ■ Water-cooled: 4ℓ/min, 0.35Mpa Φ6mm tube connection ■ Case material: SUS304 ■ Target clamp material: Al or SUS304 ■ Bellows (*Flexi-head type) material: SUS316 ■ Insulating material: PEEK/PTFE ■ Sealing material: Viton ■ High-strength magnet pack: NiFe

Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for an empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

Equipped with various conditions necessary to create a highly uniform "high-quality" thin film required in research and development settings. The nano series is a high-performance device that condenses functionality into a compact body. It employs a robust and highly airtight stainless steel chamber that ensures a high vacuum environment and sufficient T/S adjustment distance, which are essential elements for high-quality film formation with minimal defects. Additionally, all models share the IntelliDep software, which allows anyone to operate the system regardless of their level of expertise, thanks to its intuitive and easy-to-understand touch panel interface. 【nano Benchtop Compact Thin Film Experimental Equipment】 ◉ nanoPVD-S10A: RF/DC Magnetron Sputtering Device ◉ nanoPVD-T15A: Organic Film and Metal Film Deposition Device ◉ nanoPVD-ST15A: Mixed Deposition and Sputtering Composite Thin Film Experimental Device ◉ ANNEAL: Wafer Annealing Device ◉ nanoCVD: Graphene/CNT Synthesis Device ◉ nanoEM: High Vacuum EM Coater * For other detailed specifications, please contact us.

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

◉ High-efficiency and high-precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High-precision temperature control: ±1℃ ◉ High-precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe for graphene production included ◉ Compact size: 405(W) x 415(D) x 280(H)mm ◆Features◆ - Easy operation! Operation and recipe management via 5-inch touch panel - Up to 30 recipes and 30-step program creation possible - PC software included with USB cable connection, offline recipe creation on PC → upload/download to/from the device, CSV data output - Maximum sample size: 40 x 40mm: copper (nickel) foil, SiO2/Si, Al2O3/Si substrates, etc. ◆Model: nanoCVD-8G◆ - Standard program for graphene included - High vacuum process, high-precision process pressure control - Rotary pump included as standard - 3 gas supply lines (Ar, H2, CH4) - Sample heating stage (high-purity graphite) Max 1100℃ - K-type thermocouple